收藏本站
DMP2066UFDE
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
-20
±12
Units
V
V
Continuous Drain Current (Note 5) V GS = -4.5V
Continuous Drain Current (Note 5) V GS = -1.8V
Steady
State
t<5s
Steady
State
t<5s
T A = +25°C
T A = +70°C
T A = +25°C
T A = +70°C
T A = +25°C
T A = +70°C
T A = +25°C
T A = +70°C
I D
I D
I D
I D
-6.2
-4.9
-7.5
-5.9
-4.2
-3.4
-5.2
-4.1
A
A
A
A
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 5)
I DM
I S
-25
2.5
A
A
Thermal Characteristics
Total Power Dissipation (Note 6)
Characteristic
Symbol
P D
Value
0.66
Units
W
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
Steady state
t<5s
Steady state
t<5s
R θ JA
P D
R θ JA
R θ Jc
T J, T STG
189
123
2.03
61
40
9.3
-55 to +150
°C/W
°C/W
W
°C/W
°C/W
°C/W
°C
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
-20
?
?
?
?
?
?
-1
± 100
V
μA
nA
V GS = 0V, I D = -250μA
V DS = -20V, V GS = 0V
V GS = ± 12.0V, V DS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V GS(th)
-0.4
?
-1.1
V
V DS = V GS , I D = -250 μ A
?
25
36
V GS = -4.5V, I D = -4.6A
Static Drain-Source On-Resistance
R DS (ON)
?
33
56
m Ω
V GS = -2.5V, I D = -3.8A
?
50
75
V GS = -1.8V, I D = -2.0A
Forward Transfer Admittance
Diode Forward Voltage
|Y fs |
V SD
?
?
9
-0.7
?
-1.2
S
V
V DS = -10V, I D = -4.5A
V GS = 0V, I S = -2.1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
R g
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
?
?
?
?
?
?
?
?
?
?
?
1537
146
127
10.4
14.4
2.6
2.7
13.7
14.0
79.1
35.5
?
?
?
?
?
?
?
?
?
?
?
pF
pF
pF
Ω
nC
ns
V DS = -10V, V GS = 0V
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1.0MHz
V DS = -10V, V GS = -4.5V
I D = -4.5A
V DD = -10V, V GS = -4.5V, R G = 6 ? ,
R L = 10 ? , I D = -1A
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout.
6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMP2066UFDE
Document number: DS35496 Rev. 5 - 2
2 of 6
www.diodes.com
July 2012
? Diodes Incorporated
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
DMP2069UFY4-7 MOSFET P-CH 20V 2.5A 3-DFN
DMP2070UCB6-7 MOSFET P-CH 20V 2.5A U-WLB1510-6
DMP2100UCB9-7 MOSFET P CH 20V 3A U-WLB1515-9
DMP2104LP-7 MOSFET P-CH 20V 1.5A 3-DFN
DMP2104V-7 MOSFET P-CH 20V 860MA SOT-563
DMP2123L-7 MOSFET P-CH 20V 3A SOT23-3
DMP2130L-7 MOSFET P-CH 20V 3A SOT23-3
DMP2130LDM-7 MOSFET P-CH 20V 3.4A SOT-26
相关代理商/技术参数
DMP2069UFY4 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:P-CHANNEL ENHANCEMENT MODE MOSFET
DMP2069UFY4-7 功能描述:MOSFET MOSFET P-CHAN. RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMP2070UCB6-7 功能描述:MOSFET MOSFET BVDSS: 25V-30 U-WLB1015-6 T&R 3K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMP2100U-7 制造商:Zetex / Diodes Inc 功能描述:Trans MOSFET P-CH 20V 4.3A T/R 制造商:Diodes Incorporated 功能描述:MOSFET BVDSS: 25V-30V SOT23 T&R 3K - Tape and Reel 制造商:Diodes Incorporated 功能描述:MOSFET P CH 20V 4.3A SOT23 制造商:Diodes Incorporated 功能描述:20V P-CH MOSFET
DMP2100UCB9-7 功能描述:MOSFET MOSFET BVDSS: 8V-24V U-WLB1515-9 T&R 3K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMP2100UQ-7 制造商:Diodes Incorporated 功能描述:
DMP2104LP 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMP2104LP-7 功能描述:MOSFET P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube